DSA00443421.pdf by Toshiba

Partial File Text GT25G102(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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