DSASW00326246.pdf by OpNext

Partial File Text HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Obsolete
Price & Stock
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