DSA0062065.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM6472-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND IN
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