DSA00200817.pdf by California Eastern Laboratories

Partial File Text NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) FEATURES DESCRIPTION · HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pul
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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nec laser diode OTDR NX7661JB-BC NX7661JB-BC-AZ

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