DSAZSAA000614.pdf by Toshiba

Partial File Text 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA l Ultra-small package Maximum Rati
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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