DSAZSAA000617.pdf by Toshiba

Partial File Text 1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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