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Partial File Text SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. T
Datasheet Type Scan
RoHS No
Pb Free Unknown
Lifecycle Obsolete

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N-Channel, Dual-Gate FET

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