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    DSAEDA00068537.pdf by Eudyna Devices

    • FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization
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