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PRELIMINARY
PD -9.1353
IRFI530N
HEXFET® Power MOSFET
⢠Advanced Process Technology
⢠Isolated Package
⢠High Voltage Isolation = 2.5KVRMS 09
⢠Sink to Lead Creepage Dist. = 4.8mm
⢠Fully Av
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No
Unknown
End Of Life
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