DSA0064440.pdf by Toshiba

Partial File Text GT20G101(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Ma
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Obsolete
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