This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
MITSUBISHI SEMICONDUCTOR <GaAs FET>
Preliminary FA01234
u. GaAs fet hybrid ic
DESCRIPTION
FA01234 is RF Hybrid IC designed for 0.8GHz band small size handheld radio.
FEATURES
Low voltage 3.6V
High gai