DSAZSAA0008130.pdf by Fairchild Semiconductor

Partial File Text IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mâ¦ FEATURES BVDSS = 200 V Î½ Avalanche Rugged Technology RDS(on) = 0.8 â¦ Î½ Rugged Gate Oxide Technology Î½ Lower Input Capacitance I
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