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DSA0064772.pdf
by Cree
Partial File Text
CGH40120F 120 W, RF Power GaN HEMT Cree's CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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