DSA0064776.pdf by Cree

Partial File Text CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree's CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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