DSA00449446.pdf
by Infineon Technologies
- Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the
- Original
- Yes
- Unknown
- Transferred
- Find it at Findchips.com
