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DSASW00343615.pdf
by Samsung Electronics
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256Mb SDRAM Refresh cycle issue · The difference compared to 128Mb SDRAM - Row address of CBR cycle : A0 - A11 --> A0 - A12 - One CBR Interval : 4K/64ms (15.6us) --> 8K/64ms(7.8us) · To use 256
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256MB
BIOS A11