DSA00206900.pdf

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · OUTLINE DIMENSIONS (Units in mm) HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V,
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NE686 UPA827TF UPA827TF-T1

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