DSA00206902.pdf by NEC

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS (Unit in mm) · LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA · HIGH GAIN:
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NE687 UPA828TF UPA828TF-T1

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