DSA00206909.pdf by NEC

Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HI
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NE681 NE68130 NE856 NE85630 UPA831TF UPA831TF-T1 UPA834TF