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    • SEMICONDUCTOR HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Features • 6A, 400V and 500V ' VCe(on)= 2.5V Max. ' TFALL: 1.0ns • Low On-Stat
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