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    DSAZIHA100053857.pdf by American Microsemiconductor

    • 3607 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)40 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10u @V(CB
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