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    DSAZIHA100053863.pdf by American Microsemiconductor

    • T2857 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A).50uØ
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