DSAFRAZ008559.pdf by Samsung Electronics
- KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM · Fast Access Time 10,12,15,20ns(Max.) · Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 10mA(Max.)
- Original
- Unknown
- Unknown
- Unknown
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