DSAISS00097812.pdf by Toshiba
- MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ï½¥BROAD BAND INTERNALLY MATCHED HEMT ï½¥HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ï½¥HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ï½¥HERMETICALLY SEA
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