DSAISS00098060.pdf by Toshiba

Partial File Text TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M ï´ 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAN
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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