DSAISS00098062.pdf by Toshiba

Partial File Text TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT (256M ï´ 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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