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    DSAISS00098066.pdf by Toshiba

    • TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G × 8 BIT) CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAN
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