DSASW00347255.pdf

Partial File Text EGN13B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES ·High Voltage Operation : VDS=50V ·High Power : 170W (min.) @ Pin=4W (36dBm) ·High Efficiency: 55%(typ.) @ Pin=4W (36dBm) DE
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