DSAH00672593.pdf
by Toshiba
-
2SC5122
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5122
High-Voltage switching Applications
Unit: mm · · High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4
-
Original
-
Unknown
-
Unknown
-
Unknown
-