DSASW00350154.pdf by Panasonic

Partial File Text IGBTs 2PG352 Insulated Gate Bipolar Transistor s Features unit: mm M Di ain sc te on na tin nc ue e/ d q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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