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    DSASW00351201.pdf by Panasonic

    • High Frequency FETs 3SK285 Silicon N-Channel MOS FET For UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 ­0.3 s Features 0.65±0.15 0.65±0.15 ue
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