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    DSAZIHA100056672.pdf by American Microsemiconductor

    • 2N6482 Transistors Si NPN Power HF BJT Military/High-RelN V(BR)CEO (V)80º V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)67 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V
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