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    DSAZIHA100057062.pdf by American Microsemiconductor

    • B3562 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(
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