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DSA00455094.pdf
by Renesas Technology
Partial File Text
RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features · Low on-resistance RDS(on) = 38 m typ (VGS = 10 V, ID = 2.6 A) · Low drive current
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Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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