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DSA00455101.pdf
by Renesas Technology
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RQJ0303PGDQA Silicon P Channel MOS FET Power Switching REJ03G1272-0400 Rev.4.00 May 26, 2006 Features · Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) · Low drive current
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