DSA0085401.pdf by Fairchild Semiconductor

Partial File Text QFET FQB8N60CF TM 600V N-Channel MOSFET Features Description · 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced u
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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FQB8N60CTM

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