DSAH00675929.pdf by Toshiba

Partial File Text SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm · · Small package Low Drain-Source ON resistance. : Ron = 0.7 (max) (@V
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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