DSAH00675949.pdf
by Toshiba
- 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 z Low forward voltage:
- Original
- Yes
- No
- Active
-
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