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    DSAZIHA100057972.pdf by American Microsemiconductor

    • TN2106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)300m @Temp (øC)150# IDM Max (@25øC Amb)1.0 @Pulse
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