DSA00588033.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQK0203SGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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