DSA00588040.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQK0606KGDQA Silicon N Channel MOS FET Power Switching Features · Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) · Low drive current · High speed switch
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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