DSA00588062.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features · · · · Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) =
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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