DSA00588114.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta =
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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