DSAFRAZ0023001.pdf by Advanced Power Technology

Partial File Text MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Fully Implanted Base and Emitter Structure. · High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz · Low Noise F
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607 MRF951