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    DSAZIHA100060045.pdf by American Microsemiconductor

    • 2N1689 Thyristors Gate Turn Off Thyristor (GTO) V(DRM) Max. (V)200 V(RRM) Max. (V) I(T) Rated Maximum (A)1.0 @Temp. (øC) (Test Condition)25’ I(TSM) Max. (A) @ t(w) (s) (Test Condition) I(GT
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