DSA00207276.pdf
by Eudyna Devices
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FLK017XP
GaAs FET & HEMT Chips FEATURES
· · · · High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability
Source Gate
Drain
DESCRIPTIO
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Original
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Unknown
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Unknown
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Unknown
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