DSA00598209.pdf by Renesas Technology

Partial File Text RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0200 Rev.2.00 Nov 25, 2005 Features · Low on-resistance RDS(on) = 38 m typ (VGS = 10 V, ID = 2.6 A) · Low drive current · Hig
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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