DSA00600819.pdf by Renesas Technology

Partial File Text Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching Features · · · · High speed switching Low drive current Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) · Pb-free ·
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Active
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