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    DSA0096308.pdf by Infineon Technologies

    • BSO203P H OptiMOS® P-Power-Transistor Product Summary Features V DS · dual P-Channel in SO8 -20 V GS=4.5 V · 150°C operating temperature 21 m V GS=2.5 V R DS(on),max
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    BSO203P IEC61249-2-21
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