DSA0097728.pdf by Infineon Technologies

Partial File Text IPB027N10N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS V 2.7 m ID · Excellent gate charge x R DS(on) product (FOM) 100 R DS(on),max · N-channel, nor
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027N10N IEC61249-2-21 IPB027N10N3